The Global market for IGBT (Insulated Gate Bipolar
Transistor) and super junction MOSFET (Metal-oxide Semiconductor Field Effect
Transistor) was valued USD 4,776.2 million in 2012 and is expected to
grow at a CAGR of 11.6% during the forecast period 2013 - 2019.
Browse the full IGBT and Super Junction MOSFET Market Report
at http://www.transparencymarketresearch.com/insulated-gate-bipolar-transistor.html
The market is estimated to reach USD 10,100.0
million by 2019. Increasing focus on improving energy efficiency in
electrical and electronic product designs, driven by regulatory pressure is
expected to drive the growth of this market over the coming years. In
2012, Asia Pacific was the largest regional market for IGBT and super
junction MOSFETs in terms of revenue, accounting for around 39% share of the
total global market. Asia Pacific is also the fastest growing market
for IGBT and super junction MOSFETs with its proliferating electronics
manufacturing industry led by developments in China, South
Korea and Taiwan.
In 2012, IGBT modules held around 64% revenue share of
the total market, while the rest was held by discrete IGBTs. While growth of
the IGBT modules segment is driven by increasing demand from photovoltaic
inverters and electric and hybrid vehicles, discrete IGBTs are experiencing
increasing demand from the consumer electronics sector. The industrial
applications segment was the leading application area for IGBT in 2012 in terms
of revenue generation, followed by the motor drives application segment. The
electric and hybrid electric vehicles (EV/HEV) application area for IGBT is
anticipated to be the fastest growing segment during the forecast period,
growing at a CAGR of 21.1%. The converters, chargers and adapters application
area was the leading segment for super junction MOSFETs in 2012, followed by
the others (servers, networking equipment, etc.) segment. Like IGBT, the
electric and hybrid electric vehicles (EV/HEV) application segment for super
junction MOSFETs is anticipated to be the fastest growing application area,
growing at a CAGR of 30% during the forecast period 2013 - 2019.
Mitsubishi Electric Corporation was the market leader
for IGBT, followed by Infineon Technologies AG, in 2012. For super junction
MOSFETs, Infineon Technologies AG was the market leader in 2012, in terms of
percentage share. The top two players accounted for more than 85% share of the
total market for super junction MOSFETs in 2012. Other key players in the IGBT
and super junction MOSFET Market include Fairchild Semiconductor International,
Inc., STMicroelectronics N.V., ABB Ltd., Hitachi Power Semiconductor Device,
Ltd., Toshiba Corporation, Vishay Intertechnology, Inc., Fuji Electric Co.
Ltd., and Semikron, Inc.
The global IGBT and super junction MOSFET market is
segmented as below:
IGBT and Super Junction MOSFET Market, By Product Type
- IGBT
- Discrete
IGBT
- IGBT
module
- Super
junction MOSFET
- Discrete
super junction MOSFET
- Super
junction MOSFET module
IGBT and Super Junction MOSFET Market, By Application
- Residential
- Uninterrupted
power supply (UPS)
- Wind
turbines
- Photovoltaic
(PV) inverter
- Rail
traction
- Consumer
applications
- Electric
vehicles/hybrid electric vehicles (EV/HEV)
- Motor
drives
- Industrial
applications
- Converters,
adapters and chargers
- Lighting
- Others
(servers, telecom and networking devices, etc.)
IGBT and Super Junction MOSFET Market, By
Geography
- North
America
- Europe
- Asia
Pacific
- Rest
of the World (RoW)
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Email: sales@transparencymarketresearch.com
